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Shinya Ohmagari. Robust electrical performance of diamond Schottky barrier diodes post 10 MGy hard X-ray exposure. (). King Mongkut's University of Technology North Bangkok. Central Library. : , 2025.
Robust electrical performance of diamond Schottky barrier diodes post 10 MGy hard X-ray exposure
Name: Phongsaphak Sittimart
Organization :
King Mongkut's University of Technology North Bangkok. Thai-German Graduate School of Engineering
Email :
phongsaphak.s@tggs.kmutnb.ac.th
Name: Shinya Ohmagari
Organization :
National Institute of Advanced Industrial Science and Technology (AIST). Sensing System Research Center
Email :
shinya.ohmagari@aist.go.jp
keyword:
Diamond semiconductors
LCSH:
Diodes, Schottky-barrier
LCSH:
Radiation chemistry
LCSH:
X-rays
LCSH:
Electronics
-- Materials
Abstract:
Pseudo-vertical diamond Schottky barrier diodes (SBDs) were fabricated on a CVD-grown diamond substrate. The radiation hardness of the diamond SBDs was examined using hard X-ray irradiation at a radiation absorption dose of 10 MGy. Before the irradiation, ideality factor (n), Schottky barrier height (ϕb), breakdown voltage, and breakdown field (Emax) of the diamond SBDs were 1.09, 1.35 eV, 750 V, and 2.5 MV/cm, respectively. After irradiation, these electrical parameters remained almost constant. These results suggest that diamond SBD is an extremely radiation-hard electronic device, making it well-suited to applications in extreme environments, such as space and nuclear technologies
King Mongkut's University of Technology North Bangkok. Central Library
Address:
BANGKOK
Email:
library@kmutnb.ac.th
Created:
2025
Modified:
2026-01-07
Issued:
2026-01-07
บทความ/Article
application/pdf
BibliograpyCitation :
In IEEE Thailand Section. Antennas and Propagation/Electron Devices/Microwave Theory and Techniques Joint Chapter, Electrical Engineering/Electronics, Computer, Telecommunications, and Information Technology Association, and King Mongkut's University of Technology North Bangkok. The 5th Research, Invention and Innovation Congress (RI2C 2025) (pp.178-181). Bangkok : IEEE Thailand Section
eng
©copyrights King Mongkut's University of Technology North Bangkok
RightsAccess:
ใช้เวลา
0.021458 วินาที
Phongsaphak Sittimart
| Title | Contributor | Type |
|---|---|---|
| Robust electrical performance of diamond Schottky barrier diodes post 10 MGy hard X-ray exposure
มหาวิทยาลัยเทคโนโลยีพระจอมเกล้าพระนครเหนือ Phongsaphak Sittimart;Shinya Ohmagari | บทความ/Article |
Shinya Ohmagari
| Title | Contributor | Type |
|---|---|---|
| Robust electrical performance of diamond Schottky barrier diodes post 10 MGy hard X-ray exposure
มหาวิทยาลัยเทคโนโลยีพระจอมเกล้าพระนครเหนือ Phongsaphak Sittimart;Shinya Ohmagari | บทความ/Article |